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 | Nanoscale Transistors: Device Physics, Modeling and Simulation by Mark S. Lundstrom, Jing Guo Hardcover, 218 Pages, Published 2005 ISBN-10: 0-387-28002-2 / 0387280022 ISBN-13: 978-0-387-28002-8 / 9780387280028 To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulat | |